Sputtering target

  • Inventors:
  • Assignees: Mitsubishi Metal Corp
  • Publication Date: February 17, 1981
  • Publication Number: JP-S5616672-A

Abstract

PURPOSE:To enhance the sputtering efficiency and increase the film forming speed by specifying the area ratio of the total of faces on which ion is hit inside the recess of a target to the inside of the recess. CONSTITUTION:The normals of recess 2 of target 1 are formed so that arbitrary faces on which sputtered ion 3 is hit inside the same recess amounts to 50-96% of the total area of the inside of recess 3. Thus, the sputtering efficiency is enhanced and the film forming speed is increased without deteriorating the film quality. In addition, sputtering in a high vacuum is enabled.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (1)

    Publication numberPublication dateAssigneeTitle
    JP-S5861461-UApril 25, 1983