Method of forming exfoliating region

  • Inventors:
  • Assignees: Ibm
  • Publication Date: October 27, 1981
  • Publication Number: JP-S56137651-A

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    JP-2012514339-AJune 21, 2012サンディスク スリーディー,エルエルシー柱状構造のためのレジストフィーチャおよび除去可能スペーサピッチを倍増するパターニング法
    JP-H0586659-B2December 13, 1993Nippon Telegraph & Telephone
    JP-S58100441-AJune 15, 1983Toshiba CorpManufacture of semiconductor device
    JP-S59107518-AJune 21, 1984IbmMethod of forming structure having size of submicron range
    JP-S5935445-AFebruary 27, 1984Nippon Telegr & Teleph Corp Manufacture of semiconductor device
    JP-S5978542-AMay 07, 1984Nippon Telegr & Teleph Corp Manufacture of semiconductor device
    JP-S60207339-AOctober 18, 1985Matsushita Electronics CorpPattern forming method
    US-8637389-B2January 28, 2014Sandisk 3D LlcResist feature and removable spacer pitch doubling patterning method for pillar structures
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